UF1001 데이터 시트보기 (PDF) - Electronics Industry

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UF1001

ULTRA FAST RECTIFIER DIODES

Electronics Industry 

UF1001 ~ UF1007

PRV : 50 ~ 1000 Volts

Io : 1.0 Ampere

ULTRA FAST

RECTIFIER DIODES

DO - 41

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Fast switching for high efficiency

* Pb / RoHS Free

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.34 gram

0.107 (2.7)

0.080 (2.0)

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

0.205 (5.2)

0.166 (4.2)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL UF1001 UF1002 UF1003 UF1004 UF1005 UF1006 UF1007 UNIT

Maximum Recurrent Peak Reverse Voltage

VRRM

50

100

200

400

600

800 1000 V

Maximum RMS Voltage

VRMS

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length

Ta = 55 C

Maximum Peak Forward Surge Current,

8.3ms Single half sine wave superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.0 A

VDC

50

100

200

400

600

800 1000 V

IF(AV)

1.0

A

IFSM

VF

30

1.1

A

1.7

V

Maximum DC Reverse Current

Tj = 25 C

at Rated DC Blocking Voltage

Tj = 100 C

Maximum Reverse Recovery Time (1)

Typical Junction Capacitance (2)

Typical Thermal Resistance (3)

Junction Temperature Range

Storage Temperature Range

IR

IR(H)

Trr

CJ

RθJA

TJ

TSTG

5

µA

100

µA

50

75

ns

20

10

pf

25

C/W

- 55 to + 150

C

- 55 to + 150

C

Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

( 3 ) Thermal Resistance from Junction to Ambient.

Page 1 of 2

Rev. 02 : March 25, 2005

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