SBT2222F 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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SBT2222F Datasheet PDF : 4 Pages
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SBT2222F
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Low Leakage current
• Low collector saturation voltage enabling
low voltage operation
• Complementary pair with SBT2907F
PIN Connection
1
2
3
SOT-23F
Ordering Information
Type NO.
SBT2222F
Marking
Package Code
1B □
①②
① Device Code ② Year&Week Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
* : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Delay time
td
Rise time
tr
Storage time
ts
Fall Time
tf
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Ratings
60
30
5
600
350
150
-55~150
Test Condition
IC=10μA, IE=0
IC=10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=10V, IC=10mA
IC=150mA, IB=15mA
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, IE=0, f=1MHz
VCC=30Vdc, VBE(off)=0.5Vdc,
IC=150mAdc, IB1=15mAdc
VCC=30Vdc,IC=150mAdc,
IB1=IB2=15mAdc
Min.
60
30
5
-
100
-
250
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Ta=25°C
Max. Unit
-
V
-
V
-
V
20
nA
-
-
0.4
V
-
MHz
8
pF
10
ns
25
ns
225
ns
60
ns
KSD-T5C012-000
1
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