SUR481H 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP
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SUR481H Datasheet PDF : 3 Pages
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SUR481H
Absolute maximum ratings(Tr1, Tr2)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Ratings
Tr1
Tr2
50
-50
50
-50
10
-5
100
-100
150
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics(Tr1 : NPN)
Characteristic
Symbol
Test Condition
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
ICBO
IEBO
hFE
VCE(SAT)
fT*
R1
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
-
* : Characteristic of Transistor Only
Min.
-
-
120
-
-
-
Typ.
-
-
-
0.1
250
4.7
(Ta=25°C)
Max. Unit
500 nA
500 nA
-
-
0.3
V
-
MHz
-
KΩ
Electrical Characteristics(Tr2 : PNP)
Characteristic
Symbol
Test Condition
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
ICBO
IEBO
hFE
VCE(SAT)
fT*
R1
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1mA
IC=-10mA, IB=-0.5mA
VCE=-10V, IC=-5mA
-
* : Characteristic of Transistor Only
Min.
-
-
120
-
-
-
Typ.
-
-
-
-0.1
250
4.7
(Ta=25°C)
Max. Unit
-500 nA
-500 nA
-
-
-0.3
V
-
MHz
-
KΩ
KST-5002-000
2
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