MMBT5551 데이터 시트보기 (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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MMBT5551

NPN Transistors

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

NPN Transistors

Features

High Voltage Transistors

Pb-Free Packages are Available

MMBT5551 SOT-23

3

2

1.Base

2.Emitter

1

3.Collector

■ Simplified outline(SOT-23)

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

Symbol

Rating

Unit

VCBO

180

V

VCEO

160

V

VEBO

6

V

IC

0.6

A

Pc

300

mW

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

Collector-base breakdown voltage

VCBO IC = 100uA, I E = 0

Collector-emitter breakdown voltage *

VCEO IC = 1.0 mA, IB = 0

Emitter-base breakdown voltage

VEBO IE = 10uA, I C = 0

Collector cutoff current

ICBO VCB = 120 V, IE = 0

Emitter cutoff current

IEBO VEB = 4.0 V, IC = 0

IC = 1.0 mA, VCE = 5 V

DC current gain *

hFE IC = 10 mA, VCE = 5 V

IC = 50 mA, VCE = 5 V

Collector-emitter saturation voltage *

VCE(sat) IC = 50 mA, IB = 5.0 mA

Base-emitter saturation voltage *

VBE(sat) IC = 50 mA, IB = 5.0 mA

Transiston frequency

fT VCE=10V,IC=10mA,f=100MHz

* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.

■ Classification of hfe(2)

Type

Range

Marking

MMBT5551

100-300

MMBT5551-L

100-200

G1

MMBT5551-H

200-300

Min Typ Max Unit

180

V

160

V

6

V

50 nA

50 nA

80

100

300

50

0.5 V

1.0 V

100

MHz

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Dongguan YFW Electronics Co, Ltd.

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