MMBT8050 데이터 시트보기 (PDF) - Bytes

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MMBT8050

TRANSISTOR(NPN)

Bytes 

MMBT8 0 50

o

TRANSISTOR(NPN)

FEATURES

As complementary type the PNP transistor

MMBT8550 is recommended.

MARKING: Y1

SOT-23

1．BASE

2．EMITTER

3．COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Power Dissipation

Tj

Junction Temperature

Tstg

Storage Temperature

Value

40

25

5

1.5

0.3

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO IC= 100μA, IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO IC= 0.1mA, IB=0

25

Emitter-base breakdown voltage

V(BR)EBO IE=100μA, IC=0

5

Collector cut-off current

ICBO

VCB=40V, IE=0

Collector cut-off current

ICEO

VCB=20V, IE=0

Emitter cut-off current

IEBO

VEB= 5V, IC=0

DC current gain

hFE(1)

VCE=1V, IC= 100mA

200

hFE(2)

VCE=1V, IC= 800mA

40

Collector-emitter saturation voltage

VCE(sat) IC=800mA, IB= 80mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=800mA, IB= 80mA

VCE=10V, IC= 50mA

fT

f=30MHz

100

MAX

0.1

0.1

0.1

350

UNIT

V

V

V

μA

μA

μA

0.5

V

1.2

V

MHz

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Version 1.0

2016/6/27

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