MMBT8050 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
제조사
MMBT8050 Datasheet PDF : 3 Pages
| |||
Features
For Switching and Amplifier Applications.
As Complementary Type of the PNP Transistor
MMBT8550 is Recommended.
MMBT8050
NPN Transistor
SOT-23
(TO-236)
1.Base 2.Emitter 3.Collector
Marking：D9D
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
DC Current Gain
at VCE = 1 V, IC = 100 mA Current Gain Group C
D
at VCE = 1 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 35 V
Collector Base Breakdown Voltage
at IC = 10 μA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 μA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Transition Frequency
at VCE = 5 V, IC = 10 mA
www.pingjingsemi.com
Revision：1.1 Jan-2019
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Symbol
HFE
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
FT
Value
40
25
6
600
350
150
-55 to 150
Min.
Typ.
Max.
100
-
250
160
-
400
40
-
-
-
100
40
-
-
25
-
-
6
-
-
-
-
0.5
-
-
1.2
-
100
-
Unit
V
V
V
mA
mW
℃
℃
Unit
nA
V
V
V
V
V
MHz
1/3
Share Link: 