MMBT8050 데이터 시트보기 (PDF) - SHIKE Electronics

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MMBT8050

TRANSISTOR (NPN)

SHIKE Electronics 

MMBT8050

TRANSISTOR (NPN)

FEATURES

• Complimentary to MMBT8550

• Collector Current: IC=0.8A

MARKING:D9D

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Dissipation

Tj

Junction Temperature

Tstg

Storage Temperature

SOT-23

1．BASE

2．EMITTER

3．COLLECTOR

Value

40

25

5

0.8

0.3

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

IC= 100µA, IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

25

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

5

Collector cut-off current

ICBO

VCB=40 V, IE=0

Collector cut-off current

ICEO

VCB=20V, IE=0

Emitter cut-off current

IEBO

VEB= 5V, IC=0

DC current gain

HFE(1)

VCE=1V, IC= 50mA

200

HFE(2)

VCE=1V, IC= 500mA

50

Collector-emitter saturation voltage

VCE(sat) IC=500 mA, IB= 50mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=500 mA, IB= 50mA

VCE=6V, IC= 20mA

fT

f=30MHz

150

MAX UNIT

V

V

V

0.1

µA

0.1

µA

0.1

µA

350

0.6

V

1.2

V

MHz

REV.08

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