MMBT8050LT1 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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MMBT8050LT1 Datasheet PDF : 2 Pages
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RoHS
MMBT8050LT1
Typical Characteristics
WEJ ELECTRONIC CO.,LTD TypicalPulsedCurrentGain
vs Collector Current
300
250
125。C
VcE=1V
200
150
25。C
100
50
- 4 0。C
1
10
100
1000
IC-COLLECTOR CURRENT(mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
=10
0.3
125。C
0.2
25。C
0.1
-40。C
0
10
100
1000
IC-COLLECTOR CURRENT(mA)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
=10
1
0.8
-40。C
25。C
125。C
0.6
0.4
10
100
1000
IC-COLLECTOR CURRENT(mA)
Gain Bandnith Product
vs Collector Current
1000
VcE=10V
800
600
400
200
0
1
10 20
50 100
IC-COLLECTOR CURRENT(mA)
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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