MMBT3904 데이터 시트보기 (PDF) - Inchange Semiconductor
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MMBT3904 Datasheet PDF : 2 Pages
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isc Silicon NPN Transistor
MMBT3904
DESCRIPTION
·Low Voltage Use
·Ultra Super Mini Mold Package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Telephony and professional communication equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
60
40
6
200
350
-55~150
-55~150
UNIT
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
NF
Noise Figure
CONDITIONS
VCE= 60V
VCE= 30V
IC= 0.1mA ; VCE= 1V
IC= 1mA ; VCE= 1V
IC= 10mA ; VCE= 1V
IC= 50mA ; VCE= 1V
IC= 100mA ; VCE= 1V
IC= 10mA ;IB= 1mA
IC= 50mA ;IB= 5mA
IC= 10mA ;IB= 1mA
IC= 50mA ;IB= 5mA
IC=10mA;VCE=20V; f=100MHz
VCE=5.0V; f=10Hz to 15.7kHz;
IC=100uA; RS=1.0kΩ
MIN
40
70
100
60
30
0.65
300
MAX
50
50
UNIT
nA
nA
300
0.2 V
0.3 V
0.85 V
0.95 V
MHz
5
dB
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