2N4403(2006) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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2N4403
(Rev.:2006)

General Purpose Si-Epitaxial Planar Transistors

Diotec Semiconductor Germany  

2N4403

Characteristics (Tj = 25°C)

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

- VCEsat

- VCEsat

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)

- IC = 150 mA, - IB = 15 mA

- IC = 500 mA, - IB = 50 mA

- VBEsat

- VBEsat

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 35 V, - VEB = 0,4 V

- ICEX

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 35 V, - VEB = 0,4 V

- IEBV

Gain-Bandwidth Product – Transitfrequenz

- IC = 20 mA, - VCE = 10 V, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

storage time

fall time

td

- ICon = 10 mA

tr

- IBon = 1 mA

IBoff = 1 mA

ts

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

0.40 V

–

–

0.75 V

0.75 V

–

0.95 V

–

–

1.3 V

–

–

100 nA

–

–-

100 nA

200 MHz

–

–

–

–

8.5 pF

–

–

30 pf

–

–

15 ns

–

–

20 ns

–

–

225 ns

–

–

30 ns

< 420 K/W 1)

2N4401

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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