2SD313 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SD313

Silicon NPN transistor in a TO-220 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD313

Rev.F Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

PC(TC=25℃)

Tj

Tstg

数值

Rating

60

60

5.0

3.0

8.0

1.75

30

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Turn-On Time

符号

Symbol

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

fT

Cob

测试条件

Test Conditions

VCB=20V IE=0

VCE=60V RBE=∞

VEB=4.0V IC=0

VCE=2.0V IC=1.0A

VCE=2.0V IC=0.1A

IC=2.0A

IB=0.2A

VCE=2.0V

VCE=5.0V

VCB=10V

IC=1.0A

IC=0.5A

f=1.0MHz

最小值 典型值 最大值 单位

Min Typ Max Unit

0.1 mA

5.0 mA

1.0 mA

40

320

40

0.4 1.0 V

1.5 V

8.0

MHz

65

pF

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