PT8300BT 데이터 시트보기 (PDF) - CT Micro International Corporation

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PT8300BT

3mm Lamp Type Photo Transistor

CT Micro International Corporation 

PT8300BT

3mm Lamp Type Photo Transistor

Absolute Maximum Rating at 250C

Symbol

Parameters

IC

Collector Current

BVCEO Collector-Emitter Voltage

BVECO Emitter-Collector Voltage

Topr Operating Temperature

Tstg Storage Temperature

Tsol Soldering Temperature

Pto Total Power Dissipation

Optical Characteristics

Symbol

Parameters



Spectral Bandwidth

P

Peak Sensitivity

θ1/2 View Angle

Test Conditions

-

-

VCE=5V

Electrical Characteristics

Symbol

Parameters

ICEO Dark Current

VCE(sat)

Collector-Emitter

Saturation Voltage

IC

Collector Light Current

CT Terminal Capacitance

Test Conditions

Ee=0mW /cm2

VCE=20V

Ee=1mW /cm2

IC=0.9mA

Ee=1mW /cm2

P=940nm, VCE=5V

Ee=0mW /cm2

f=1MHz ,VCE=5V

Ratings

20

35

5

-40 ~ +85

-40 ~ +100

260

150

Units

mA

V

V

0C

0C

0C

mW

Notes

1

2

3

Min Typ Max Units Notes

760

-

1100 nm

-

880

-

nm

-

25

-

deg

Min Typ Max Units Notes

-

-

100

nA

-

-

0.4

V

0.9

3.0

6.4

mA

4

-

3.80

-

pF

CT Micro

Proprietary & Confidential

Page 2

Rev 1

May, 2014

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