BUX48C 데이터 시트보기 (PDF) - Comset Semiconductors
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BUX48C Datasheet PDF : 3 Pages
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NPN BUX48C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Mx Unit
VCEO(SUS)
Collector-Emitter Sustaining
Voltage (*)
IC= 100 mA
700 -
-
V
VEBO
Emitter-Base Voltage
IC= 0A, IE= 50 mA
7
- 30 V
ICEO
Collector Cutoff Current
VCE= 700 V, IB= 0A
-
-
1 mA
VCE= 1200 V, VBE= 0V
-
- 0.5
ICES
Collector Cutoff Current
VCE= 1200 V, VBE= 0V
Tcase = 125°C
-
-
3 mA
IEBO
Emitter Cutoff Current
VEB= 6 V, IC= 0
-
-
1 mA
hFE
DC Current Gain (*)
IC= 1 A, VCE= 5 V
15 - 50 -
VCE(SAT)
Collector-Emitter saturation
Voltage (1)
IC= 6 A, IB= 1.5 A
IC= 10 A, IB= 4 A
-
-
VBE(SAT)
Base-Emitter saturation Voltage IC= 6 A, IB= 1.5 A
(*)
IC= 10 A, IB= 4 A
-
-
1.5
3
1.5
V
2
SWITCHING TIMES
Symbol
Ratings
ton
Turn-on time
ts
Storage time
tf
File time
Test Condition(s) Min
-
IC=6 A , IB1 = -IB2 =1.5 A
VCC=250 V
-
-
Typ Max Unit
0.5 1.0
1.5 3 µs
0.2 0.7
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
01/10/2012
COMSET SEMICONDUCTORS
2/3
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