BUX39 데이터 시트보기 (PDF) - Comset Semiconductors
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BUX39 Datasheet PDF : 2 Pages
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NPN BUX39
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
IC=12 A , VCE=4.0 V
IC=20 A , VCE=4.0 V
IC=12 A , IB=1.2 A
IC=20 A , IB=2.5 A
IC=20 A , IB=2.5 A
Symbol
IS/B
fT
ton
Ratings
Test Condition(s)Sec
Second breakdown collector VCE=30 V , ts = 1s
current
VCE=135 V , ts = 1s
Transition frequency
VCE=15 V , IC=1 A , f=4 MHz
Turn-on time
IC=8 A , IB=1 A , VCC=150 V
ts
Storage time
tf
File time
IC=8 A , VCC=150 V
IB1 = -IB2 =1 A
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
15 - 45
8- -
-
- 0.7 1.2
- 1.25 1.6 V
- 2.1 2.5
Min Typ Mx Unit
4-
1-
-
-
A
8 - - MHz
- 0.8 1.2
- 0.55 1 µs
- .15 0.25
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/2
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