BDT82 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDT82 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84;
-100V(Min)- BDT86; -120V(Min)- BDT88
·Complement to Type BDT81/83/85/87
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT82
-60
BDT84
-80
VCBO
Collector-Base Voltage
V
BDT86
-100
BDT88
-120
BDT82
-60
BDT84
-80
VCEO
Collector-Emitter Voltage
V
BDT86
-100
BDT88
-120
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
-20
A
IBB
Base Current
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
-4
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1
70
UNIT
℃/W
℃/W
isc Product Specification
BDT82/84/86/88
isc Website：www.iscsemi.cn
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