2N5401C 데이터 시트보기 (PDF) - KEC
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2N5401C Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: VCBO=-160V, VCEO=-150V
Low Leakage Current.
: ICBO=-50nA(Max.) @VCB=-120V
Low Saturation Voltage
: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Ta=25 )
Collector Power Dissipation
(Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
PC
Tj
Tstg
RATING
-160
-150
-5
-600
-100
625
1.5
150
-55 150
UNIT
V
V
V
mA
mA
mW
W
2N5401C
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
1997. 5. 13
Revision No : 0
1/2
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