IXGH10N100U1 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXGH10N100U1 Datasheet PDF : 6 Pages
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IXGH 10N100U1
IXGH 10N100AU1
Symbol
g
fs
Cies
C
oes
Cres
Qg
Qge
Qgc
t
d(on)
tri
td(off)
tfi
Eoff
td(on)
t
ri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I = I ; V = 10 V,
4
8
S
C
C90 CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
750
pF
200
pF
30
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
52 70 nC
13 25 nC
24 45 nC
Inductive load, TJ = 25°C
100
ns
I
C
=
I,
C90
V
GE
=
15
V,
L
=
300
µH,
VCE = 0.8 VCES, RG = Roff = 150 Ω
200
ns
550 900 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
10N100U1 800
10N100AU1 500
10N100AU1
2
ns
ns
3 mJ
100
ns
Inductive
load,
T
J
=
125°C
200
ns
IC = IC90, VGE = 15 V, L = 300 µH
1.1
mJ
VCE = 0.8 VCES, RG = Roff = 150 Ω
600 1000 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
J
G
10N100U1 1250 2000 ns
10N100AU1 600 1000 ns
10N100U1
5.0
mJ
10N100AU1 2.5
mJ
0.25
1.2 K/W
K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
F
IRM
trr
RthJC
I = I , V = 0 V,
F
C90 GE
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.75 V
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
6.5
VR = 540 V
TJ = 125°C 120
I
F
=
1
A;
-di/dt
=
50
A/µs;
V
R
=
30
V
T=
J
25°C
50
A
ns
60 ns
1.6 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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