MMBTA55-A56 데이터 시트보기 (PDF) - Bruckewell Technology LTD
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MMBTA55-A56 Datasheet PDF : 3 Pages
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Preliminary MMBTA55-A56
PNP General Purpose Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Symbol
Parameter
MMBTA55
MMBTA56
VCBO
Collector-Base Voltage
-60
-80
VCEO
Collector-Emitter Voltage
-80
-80
VEBO
Emitter-Base Voltage
-4
IC
collector current (DC)
-0.5
PC
Collector Dissipation
-0.3
RθJA
Thermal resistance junction to ambient
417
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Unit
V
V
V
A
W
°C/W
°C
Ordering Information
Type No.
MMBTA55
MMBTA56
Marking
2H
2GM
Package Code
SOT-23
SOT-23
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO
Collector-base breakdown voltage (MMBTA55)
Collector-base breakdown voltage (MMBTA56)
IC = -100μA , IE = 0
V(BR)CEO
Collector-emitter breakdown voltage(MMBTA55)
Collector-emitter breakdown voltage(MMBTA56) IC = -1.0mA , IB = 0
V(BR)EBO Emitter-base breakdown voltage
IE = 100μA , IC = 0
ICBO
ICEO
hFE
VCE(sat)
VBE(ON)
fT
Collector cut-off current (MMBTA55)
Collector cut-off current (MMBTA56)
Collector cut-off current (MMBTA55)
Collector cut-off current (MMBTA56)
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
VCB = -60 V , IE = 0
VCB = -80 V , IE = 0
VCB = -60 V , IB = 0
VCB = -80 V , IB = 0
VCE = -1 V , IC = -10mA
VCE = -1 V , IC = -100mA
IC = -100mA , IB = -10mA
IC = -100mA , ICE = -1.0 V
VCE = -1 V , IC = -100mA
f = 100MHz
MIN MAX UNIT
-60
V
-80
-60
V
-80
-4
V
-0.1
μA
-0.1
μA
100
-
100
-0.25
V
-1.2
V
50
MHz
Publication Order Number: [MMBTA55-A56]
© Bruckewell Technology Corporation Rev. A -2014
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