2SA1162 데이터 시트보기 (PDF) - Bruckewell Technology LTD
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2SA1162 Datasheet PDF : 4 Pages
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2SA1162
Silicon PNP Epitaxial Type Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING @ Ta=25°C unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-150
mA
IB
Base Current
-30
mA
PC
Collector Dissipation
150
mW
Tj
Junction Temperature
125
°C
Tstg
Storage Temperature Range
-55 to +125
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
MIN
ICBO
Collector cut-off current
VCB = -50 V , IE = 0
IEBO
Emitter cut-off current
VEB = -5 V , IC = 0
hFE
DC current gain
VCE = -6 V , IC = -2 mA
70
VCE(sat)
Collector-emitter saturation voltage IC = -100mA , IB = -10mA
fT
Transition frequency
VCE = -10 V , IC = -1 mA
Cob
Collector output capacitance
VCB = -10 V , IE = 0
f = 1.0MHz
NF
Noise figure
VCE = -6 V, IC = -0.1 mA
f = 1.0KHz , Rg = 10kΩ
*Pulse test: tp≤300μs, δ≤0.02.
TYP MAX UNIT
-0.1
μA
-0.1
μA
400
-0.1
-0.3
V
60
MHz
4
7
pF
1.0
10
dB
hFE CLASSIFICATION
Marking
Rank
Range
SO
O
70-140
SY
Y
120~240
SR
GR
200-400
Publication Order Number: [2SA1162]
© Bruckewell Technology Corporation Rev. A -2014
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