2SD2908 데이터 시트보기 (PDF) - Bruckewell Technology LTD
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2SD2908 Datasheet PDF : 4 Pages
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2SD2908
Low VCE(sat) transistor(80V,0.7A)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
5
A
PC
Collector Dissipation
500
mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
MIN
V(BR)CBO Collector-base breakdown voltage
IC = 50μA , IE = 0
50
V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA , IB = 0
20
V(BR)EBO Emitter-base breakdown voltage
IE = 50μA , IC = 0
6
ICBO
Collector cut-off current
VCB = 40 V , IE = 0
IEBO
Emitter cut-off current
VEB = 5 V , IC = 0
hFE
DC current gain
VCE = 2 V , IC = 0.5 A
120
VCE(sat)
Collector-emitter saturation voltage IC = 4 A , IB = 0.1 A
fT
Transition frequency
VCE = 6 V , IC = 50 mA
f = 100MHz
Cob
Collector output capacitance
VCB = 20 V , IE = 0
f = 1.0MHz
TYP MAX UNIT
V
V
V
0.5
μA
0.5
μA
390
0.25
1.0
V
150
MHz
30
pF
CLASSIFICATION OF hFE
Marking
Rank
Range
AHQ
Q
120-270
AHR
R
180-390
Publication Order Number: [2SD2908]
© Bruckewell Technology Corporation Rev. A -2014
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