A92 데이터 시트보기 (PDF) - Nanjing International Group Co

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A92

TO-92 Plastic-Encapsulate Transistors

Nanjing International Group Co 

DONGGUAN NANJING ELECTRONICS LTD.,

TO-92 Plastic-Encapsulate Transistors

A92 TRANSISTOR (PNP)

FEATURES

High voltage

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-300

VCEO Collector-Emitter Voltage

-300

VEBO Emitter-Base Voltage

-5

IC

Collector Current -Continuous

-200

ICM Collector Current -Pulsed

PC Collector Power Dissipation

-500

625

Tj

Junction Temperature

150

Tstg Storage Temperature

-55-150

RӨJA Thermal Resistance, Junction to Ambient

200

RӨJC Thermal Resistance, Junction to Case

83.3

Units

V

V

V

mA

mA

mW

℃

℃

℃/mW

℃/mW

TO-92

1.EMITTER

2.BASE

3.COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ

Collector-base breakdown voltage

V(BR)CBO IC=-100uA, IE=0

-300

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

-300

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA, IC=0

-5

Collector cut-off current

ICBO

VCB= -200 V, IE=0

Emitter cut-off current

IEBO

VEB= -5 V, IC=0

DC current gain

hFE(1)

hFE(2)

VCE= -10 V, IC=- 1 mA

60

VCE= -10V, IC = -10 mA

80

hFE(3)

VCE= -10 V, IC= -80 mA

60

Collector-emitter saturation voltage

VCE(sat) IC= -20 mA, IB= -2 mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC= -20 mA, IB= -2 mA

fT

VCE= -20 V, IC= -10 mA

f = 30MHz

50

CLASSIFICATION OF hFE(2)

Rank

A

Range

80-100

B1

100-150

B2

150-200

Max

Unit

V

V

V

-0.25

μA

-0.1

μA

250

-0.2

V

-0.9

V

MHz

C

200-250

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