Fig 1. On-State Characteristics
100
Top :
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
VGS = 4.5V
VGS = 10V
2.0
1.5
1.0
0.0
※ Note : TJ = 25℃
0.5
1.0
1.5
2.0
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
50
40
30
20
10
0
0
Ciss
Coss
Crss
5
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
※ Notes :
1. VGS = 0V
2. f=1MHz
10
15
20
25
30
VDS, Drain-Source Voltage [V]
2N7002
Fig 2. Transfer Characteristics
100
150oC
10-1
0
25oC
2
-55oC
※ Notes :
1. VDS = 10V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
12
10
8
6
4
2
0
0.0
VDS = 30V
VDS = 48V
※ Note : ID = 115 mA
0.2
0.4
0.6
0.8
1.0
1.2
Qg, Total Gate Charge [nC]
3/6