2N7002 데이터 시트보기 (PDF) - Dongguan City Niuhang Electronics Co.LTD
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2N7002 Datasheet PDF : 4 Pages
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Niu Hang
Electronic Co. Ltd
2N7002
N-CHANNEL ENHANCEMENT-MODE MOSFETS
Production
Data Sheet
■DEVICE MARKING
GM7002=7002
■ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted
Characteristic
Symbol Min Typ Max Unit
Drain-Source Breakdown Volta ge
(ID =250uA,VGS=0V)
B VDSS
60
Gate Threshold Voltage
(ID =250uA,VGS= VDS)
Drain-Source On Voltage
(ID=50mA,VGS=5V)
(ID =500mA,VGS=10V)
Diode Forward Voltage Drop
(I SD=200m A,VGS=0V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= BVDSS)
(VGS=0V, VDS=0.8BVDSS, TA=125℃)
Gate Body Leakage
(VGS=+20V, VDS=0V)
VGS(th) 1.0
VDS(ON)
—
VSD
—
IDSS
—
IGSS
—
Static Drain-Source On-State Resistance
(ID=50mA,VGS=5V)
(ID=500mA,VGS=10V)
Input Capacitance
(VGS=0V, VDS=25V,f=1MHz)
Common Source Output Capacitance
(VGS=0V, VDS=25V,f=1MHz)
R DS(ON)
—
CISS
—
COSS
—
Turn-ON Time
(VDS=30V, ID=200mA, RGEN=25Ω)
Turn-OFF Time
(VDS=30V, ID=200mA, RGEN=25Ω)
Reverse Recovery Time
(ISD=800mA, VGS=0V)
t (on)
—
t(off)
—
trr
—
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3. Pulse Width<300μs; Duty Cycle <2.0%.
—
—
V
—
2.5
V
— 0.375
V
3.75
—
1.5
V
—
1
uA
500
—
+100
nA
—
7.5
Ω
7.5
—
50
pF
—
25
pF
—
20
ns
—
40
ns
400
—
ns
http://www.nhel.com.cn
Date:2014/10/20 Rev.:AA
Page: 2 of 4
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