CHT05N1PT 데이터 시트보기 (PDF) - CHENMKO CO., LTD.
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CHT05N1PT Datasheet PDF : 2 Pages
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RATING CHARACTERISTIC CURVES ( CHT05N1PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
357
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
VCEsat
VBEon
Ccb
fT
collector-emitter saturation
voltage
base-emitter voltage
collector-base capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 60 V
IC = 0; VEB = 4 V
VCE = 1.0 V; note 1
IC = 10 mA
IC = 100 mA
MIN.
−
−
MAX.
0.1
0.1
UNIT
uA
uA
100
−
100
−
IC = 100 mA; I B =10 mA
−
IC = 100 mA; VCE = 1.0 V
−
IE = ie = 0; VCB =10V; f = 1 MHz
−
IC = 100 mA; VCE =1.0 V ;
80
f = 100 MHz
0.25
V
1.2
V
10
pF
−
MHz
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