CH847UPNPT 데이터 시트보기 (PDF) - CHENMKO CO., LTD.
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CH847UPNPT Datasheet PDF : 3 Pages
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RATING CHARACTERISTIC ( CH847UPNPT )
CHARACTERISTICS of TR1 ( NPN Transistor )
Tamb = 25 °C unless otherwise specilped.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
hFE
VCEsat
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
VCB = 30 V
VCB = 30 V; TA = 125 OC
IC = 0; VEB = 5 V
IC = 2.0 mA; VCE = 5.0V; note 1
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
VBEsat base-emitter saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
VBEon base-emitter voltage
IC = 2.0 mA ; V cE = 5 V
IC = 10.0 mA ; V CE = 5 V
CCBO
fT
collector-base capacitance
transition frequency
I E = ie = 0; VCB = 10V ; f = 1 MHz
IC = 10 mA; VCE = 5V ;
f = 100 MHz
MIN.
−
−
−
200
−
−
TYP.
−
−
−
−
90
200
MAX.
15
5.0
0.1
450
250
600
UNIT
nA
uA
uA
mV
mV
−
700
−
mV
−
900
−
mV
580
660
700
mV
−
−
720
mV
−
3.5
6.0
pF
100
300
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CHARACTERISTICS of TR2( PNP Transistor )
Tamb = 25 °C unless otherwise specilped.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
hFE
VCEsat
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
VCB = 30 V
VCB = 30 V; TA = 125 OC
IC = 0; VEB = - 5 V
IC = -2.0 mA; VCEI= -5.0V
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
VBEsat base-emitter saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
VBEon base-emitter voltage
CCBO
fT
collector-base capacitance
transition frequency
IC = 2.0 mA ; V cE = 5 V
IC = 10.0 mA ; V CE = 5 V
IE = ie = 0; VCB = -10V; f = 1 MHz
IC = -10mA; VCE = -5V ;
f = 100 MHz
MIN.
−
−
−
200
−
−
−
−
-600
−
−
100
TYP.
−
−
−
290
-75
-250
-700
-850
-650
−
3.0
200
MAX.
-15
-4.0
-0.1
450
-300
-650
UNIT
nA
uA
uA
mV
mV
−
mV
-950 mV
-750 mV
-820 mV
4.5
pF
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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