L6270 - L6271
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Vout
DC, Ibias
Io ut
PSRR,P
PSRR,N
Cload
Cint
K
Ierr (3)
Voffset
DCShift range
Parameter
OpAmp Output dynamic voltage
OpAmp Bias supply current
(both)
OpAmp Dynamic Output current
OpAmp Positive power supply
rejection ratio
OpAmp Negative power supply
rejection ratio
OpAmp Load capacitance
range
OpAmp Integration capacitance
OpAmp Current ratio
OUTK/OUT1
OpAmp Ioutk
OpAmp Input offset voltage
Dynamic Shifter
Input Range
Test Condition
Capacitive load
@ 50kHz
@ 50kHz
Voltage mode Gain min 20dB
Charge mode Gain min 20dB
Iout1 = 0
Min. Typ. Max. Unit
HVM
HVP
V
7
mA
-75
TBD
75
mA
dB
TBD
dB
0.4
24
nF
0.4
24
nF
9.8
10 10.2
-10
50
µA
±10 mV
1
4
V
Note 1: Selectable by external resistor.
Note 2: Set by external Coil and Capacitor.
Note 3: It will be write after silicon characterization, it’s designed for a maximum offset of a few mA.
In charge mode the Piezo is in open loop, and if Cpiezo = 0.4nF with a maximum Current error of ±5µA the Maximum long time voltage
drift is ±12mV/µs
Figure 1a. HVP load regulation in single supply
mode”.
VS
D99IN1003
(V)
38
36
Supply=8V
34
32
30
28
Supply=5V
26
24
22
0
0.004 0.008 0.012 0.016 IL(A)
5/10