TDA8581 데이터 시트보기 (PDF) - Philips Electronics
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TDA8581 Datasheet PDF : 20 Pages
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Philips Semiconductors
Multi-purpose high-gain power amplifier
Preliminary specification
TDA8581
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VP
Iq(tot)
Istb
Gv
operating supply voltage
total quiescent current
standby supply current
voltage gain
VP = 14.4 V
VP = 14.4 V
single-ended
bridge-tied load
Bridge-tied load application
Po
THD
Voffset(DC)
Vno
SVRR
output power
total harmonic distortion
DC output offset voltage
noise output voltage
supply voltage ripple rejection
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
THD = 0.5%; VP = 24 V;
RL = 8 Ω
fi = 1 kHz; Po = 1 W;
VP = 14.4 V; RL = 8 Ω
fi = 1 kHz; Po = 10 W;
VP = 24 V; RL = 8 Ω
VP = 14.4 V; ‘mute’
condition; RL = 4 Ω
VP = 14.4 V; ‘on’ condition
Rs = 1 kΩ; VP = 14.4 V
fi = 1 kHz; Vripple(p-p) = 2 V;
‘on’ or ‘mute’ condition;
Rs = 0 Ω
Single-ended application
Po
Voffset(DC)
Vno
SVRR
output power
DC output offset voltage
noise output voltage
supply voltage ripple rejection
THD = 0.5%; VP = 14.4 V;
RL = 4 Ω
THD = 0.5%; VP = 24 V;
RL = 4 Ω
VP = 14.4 V; ‘mute’
condition; RL = 4 Ω
VP = 14.4 V; ‘on’ condition
Rs = 1 kΩ; VP = 14.4 V
fi = 1 kHz; Vripple(p-p) = 2 V;
‘on’ or ‘mute’ condition;
Rs = 0 Ω
MIN.
8.0
−
−
38
44
TYP.
−
120
1
40
46
MAX.
28
140
50
42
48
UNIT
V
mA
µA
dB
dB
−
16
−
W
−
28
−
W
−
0.05
−
%
−
0.05
−
%
−
10
20
mV
−
0
120
mV
−
200
320
µV
55
−
−
dB
−
4.2
−
W
−
13
−
W
−
10
20
mV
−
0
120
mV
−
160
280
µV
42
−
−
dB
1998 May 27
3
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