SCA-11 데이터 시트보기 (PDF) - Stanford Microdevices
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SCA-11 Datasheet PDF : 3 Pages
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Product Description
Stanford Microdevices’ SCA-11 is a high performance Gallium
Arsenide MESFET MMIC Amplifier. This device is fabricated
using Stanford’s reliable 0.5 micron gate MESFET process.
This amplifier is internally matched with typical VSWR of
1.6:1. Its positive gain slope makes it an ideal choice for
cascading multiple amplifiers without sacrificing high
frequency response.
SCA-11
0.3-3 GHz, Cascadable
GaAs MMIC Amplifier
These unconditionally stable amplifiers provides 10dB of gain
and +19dBm of 1dB compressed power and require only a
single positive 5-volt supply. Only 2 DC-blocking capacitors,
a bias resistor and an optional inductor are needed for
operation.
This MMIC is an ideal choice for wireless applications such
as cellular, PCS, CDPD, wireless data and SONET.
Output Power vs. Frequency
Vd= 5V, Id= 90mA
21
20
dBm 19
18
17
0.3
1
2
3
GHz
Product Features
• High Output Power : +19dBm P1dB
• Very Flat Gain : +/-0.5dB from 0.3-2.0 GHz
• Cascadable 50 Ohm : 1.6:1 VSWR
• Low Noise Figure : 4.5dB Typical
• Patented GaAsHBT Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• Cellular, PCS, CDPD, Wireless Data, SONET
Electrical Specifications at Ta = 25C
Sym bol
G
P
GF
P a ra m e te rs : Te s t C o n d itio n s:
V = + 5 .0 V , Z = 5 0 O h m s
D
0
P o w e r G a in
G a in F la tn e s s
G a in F la tn e s s o v e r a n y 1 0 0 M H z b a n d
P 1dB
NF
VSW R
O u tp ut P o w e r a t 1 d B C o m p res s io n
N o ise F ig u re
In p u t / O u tp u t
f = 0 .3 -3.0 G H z
f = 0 .3 -2.0 G H z
f = 0 .3 -3.0 G H z
f = 0 .3 -3.0 G H z
f = 0 .3 -2.0 G H z
U n its
dB
dB
dB
dBm
dB
-
M in .
Typ .
M ax.
8
10
+ /- 0 .5
+ /- 0 .1
+19
3 .5
1 .5
T h ird O rd e r In te rc e p t P o in t
IP 3
O u tp ut To n e s @ 0 d B m 1 0 M H z a p a rt
f = 0 .3 -2.0 G H z
dBm
27
T
D
IS O L
G rou p D e la y
R e v e rs e Is o la tio n
f = 1 .9 G H z
f = 0 .3 -3.0 G H z
psec
dB
100
14
d G /d T D e v ic e G a in Te m p e ra tu re C o e ffic ie n t
d B /d eg C
-0 .0 0 1 5
ID
D e v ic e C u rre n t
V D= + 5 .0V
mA
40
75
120
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5-129
http://www.stanfordmicro.com
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