STB40NF10L(2006) 데이터 시트보기 (PDF) - STMicroelectronics

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STB40NF10L
(Rev.:2006)

N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB40NF10L

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 40A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 40A, di/dt = 100A/µs,

Reverse recovery charge VDD = 30V, Tj = 150°C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

110

467

8

Max. Unit

40

A

160 A

1.3 V

ns

nC

A

5/13

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