Y100NS20FD 데이터 시트보기 (PDF) - STMicroelectronics

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Y100NS20FD

N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY™ Power MOSFET

STMicroelectronics 

STY100NS20FD

N-channel 200V - 0.022Ω - 100A - Max247

MESH OVERLAY™ Power MOSFET

General features

Type

STY100NS20FD

VDSS

200V

RDS(on)

<0.024Ω

ID

100A

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

■ ± 20V gate to source voltage rating

■ Low intrinsic capacitance

■ Fast body-drain diode:low trr, Qrr

Description

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of Power MOSFETs with

outstanding performances. The new patented

STrip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(ON) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

Applications

■ Switching application

3

2

1

Max247

Internal schematic diagram

Order codes

Part number

STY100NS20FD

Marking

Y100NS20FD

Package

Max247

Packaging

Tube

May 2006

Rev 3

1/12

www.st.com

12

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