STV160NF02LT4 데이터 시트보기 (PDF) - STMicroelectronics
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STV160NF02LT4 Datasheet PDF : 8 Pages
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STV160NF02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tr(Voff)
tf
tc
Turn-off Delay Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 10 V, ID = 80 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 16 V, ID = 160 A,
VGS = 10 V
Test Conditions
VDD = 10 V, ID = 80 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
Vclamp = 16 V, ID = 40 A
RG = 4.7Ω, VGS = 10V
Min.
Typ.
28
800
115
15
45
Max.
160
Unit
ns
ns
nC
nC
nC
Min.
Typ.
80
240
Max.
Unit
ns
ns
80
ns
40
ns
140
ns
200
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 160 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A, di/dt = 100A/µs,
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
90
225
5
Max.
160
640
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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