STB16NS25T4 데이터 시트보기 (PDF) - STMicroelectronics
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STB16NS25T4 Datasheet PDF : 9 Pages
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STB16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 125 V, ID = 8 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 200V, ID = 16 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off- Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 125V, ID = 8 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Vclamp = 200V, ID = 16 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
15
25
60
8
22
Max.
80
Unit
ns
ns
nC
nC
nC
Min.
Typ.
75
35
25
30
55
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 16 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 16 A, di/dt = 100A/µs
VDD = 33V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ.
270
1.5
11.5
Safe Operating Area
Thermal Impedance
Max.
16
64
1.5
Unit
A
A
V
ns
µC
A
3/9
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