STD60NF3LLT4(2002) 데이터 시트보기 (PDF) - STMicroelectronics

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STD60NF3LLT4
(Rev.:2002)

N-CHANNEL 30V - 0.0075Ω - 60A DPAK STripFET™ II POWER MOSFET

STMicroelectronics 

STD60NF3LL

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

1.5

Rthj-amb Thermal Resistance Junction-ambient Max

100

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10 V, ID = 30 A

VGS = 4.5 V , ID = 30 A

Min.

1

Typ. Max.

0.0075 0.0095

0.0085 0.0105

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (1)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS =15 V, ID =30 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

30

2210

635

138

Max.

Unit

S

pF

pF

pF

2/9

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