STE48NM50 데이터 시트보기 (PDF) - STMicroelectronics

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STE48NM50

N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP MDmesh™ MOSFET

STMicroelectronics 

STE48NM50

N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP

MDmesh™ MOSFET

Table 1: General Features

TYPE

VDSS

RDS(on)

ID

(@Tjmax)

STE48NM50

550V

< 0.1Ω

48 A

s TYPICAL RDS(on) = 0.08Ω

s HIGH dv/dt AND AVALANCHE CAPABILITIES

s 100% AVALANCHE TESTED

s LOW INPUT CAPACITANCE AND GATE

CHARGE

s LOW GATE INPUT RESISTANCE

s TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizon-

tal layout. The resulting product has an

outstanding low on-resistance, impressively high

dv/dt and excellent avalanche characteristics. The

adoption of the Company’s proprietary strip tech-

nique yields overall dynamic performance that is

significantly better than that of similar competi-

tion’s products.

Figure 1: Package

ISOTOP

Figure 2: Internal Schematic Diagram

APPLICATIONS

The MDmesh™ family is very suitable for increas-

ing power density of high voltage converters allow-

ing system miniaturization and higher efficiencies.

Table 2: Order Codes

SALES TYPE

STE48NM50

MARKING

E48NM50

PACKAGE

ISOTOP

PACKAGING

TUBE

March 2005

Rev. 2

1/9

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