STP10NC50FP 데이터 시트보기 (PDF) - STMicroelectronics
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STP10NC50FP Datasheet PDF : 7 Pages
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STP10NC50 STP10NC50FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Test Conditions
VDD = 250 V ID = 5 A
RG = 4.7 Ω
VGS = 10 V
Min.
T yp.
29
16
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 160 V ID = 10 A VGS = 10 V
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
41
49
nC
12
nC
19
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 160 V ID = 10 A
RG = 4.7 Ω VGS = 10 V
Min.
T yp.
16
18
29
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD =10 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD =10 A di/dt = 100 A/µs
VDD = 50 V Tj = 150 oC
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
10.6
42.4
Unit
A
A
1.6
V
560
ns
4.9
nC
17.5
A
3/7
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