B85NF55L 데이터 시트보기 (PDF) - STMicroelectronics

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B85NF55L

N-channel 55 V, 0.0060Ω, 80 A, TO-220, D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB85NF55L, STP85NF55L

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS = 0)

VGS

ID (1)

ID(1)

IDM(2)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4) Single pulse avalanche energy

TJ Operating junction temperature

Tstg Storage temperature

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

4. Starting TJ = 25 °C, ID = 40 A, VDD = 40 V

Value

55

± 15

80

80

320

300

2.0

10

980

-55 to 175

Unit

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max.

Rthj-amb Thermal resistance junction-ambient max.

Rthj-pcb Thermal resistance junction-pcb max.(1)

Tl Maximum lead temperature for soldering purpose

1. When mounted on 1inch² FR-4 2Oz Cu board

Value

D2PAK

TO-220

0.5

62.5

35

300

Unit

°C/W

°C/W

°C/W

°C

Doc ID 8544 Rev 8

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