DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

B85NF55L 데이터 시트보기 (PDF) - STMicroelectronics

부품명
상세내역
제조사
B85NF55L Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
STB85NF55L, STP85NF55L
(TCASE= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating @125 °C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±15 V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
1
1.6 2.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A
VGS= 5 V, ID= 40 A
0.0060 0.008
0.008 0.01
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15 V, ID = 40 A
VDS =25 V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 27.5 V, ID = 80 A
VGS = 5 V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 130
S
4050
pF
- 860
pF
300
pF
80 110 nC
-
20
nC
45
nC
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 27.5 V, ID= 40 A,
RG=4.7 Ω, VGS= 5 V
Figure 14 on page 8
Min. Typ. Max. Unit
35
ns
165
ns
-
-
70
ns
55
ns
4/14
Doc ID 8544 Rev 8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]