IRFBC40 데이터 시트보기 (PDF) - STMicroelectronics
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IRFBC40 Datasheet PDF : 8 Pages
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IRFBC40
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 3.6 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 6.2 A VGS = 10 V
Min.
Typ .
18
8
38
9.9
13.3
Max.
50
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 6.2 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
8
5
15
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 6.2 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD =6.2 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
6.2
25
Unit
A
A
1.6
V
530
ns
4.5
µC
17
A
Safe Operating Area
Thermal Impedance
3/8
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