STU11NC60 데이터 시트보기 (PDF) - STMicroelectronics
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STU11NC60 Datasheet PDF : 8 Pages
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STU11NC60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
0.78
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Rthc-sink Thermal Resistance Case-sink Typ
0.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
12
400
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 6A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min. Typ. Max. Unit
2
3
4
V
0.48 0.55
Ω
11
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =6A
13
S
Ciss
Input Capacitance
2150
pF
Coss
Output Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
275
pF
Crss
Reverse Transfer
Capacitance
39
pF
2/8
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