STD5NM60(2000) 데이터 시트보기 (PDF) - STMicroelectronics
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STD5NM60 Datasheet PDF : 6 Pages
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STD5NM60
N-CHANNEL 600V - 0.8Ω - 5A DPAK
MDmesh™ Power MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD5NM60
600V
<0.9Ω
5A
s TYPICAL RDS(on) = 0.8Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD<5A, di/dt<200A/µs, VDD<V(BR)DSS, TJ<TJMAX
May 2000
Value
600
600
±30
5
3.1
20
50
0.4
6
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/ °C
V/ns
°C
°C
1/6
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