STD5NM60(2000) 데이터 시트보기 (PDF) - STMicroelectronics
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STD5NM60 Datasheet PDF : 6 Pages
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STD5NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300V, ID = 2.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400V, ID = 5A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Condit ions
VDD = 480V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
16
ns
9
ns
13
nC
3
nC
11
nC
Min .
Typ.
20
29
30
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 5A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5A, di/dt = 100A/µs, VDD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
300
1.8
12
Max.
5
20
1.5
Unit
A
A
V
ns
µC
A
3/6
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