STN1NC60 데이터 시트보기 (PDF) - STMicroelectronics
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STN1NC60 Datasheet PDF : 8 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 300V, ID = 0.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 1A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 480V, ID = 1A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 0.3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STN1NC60
Min. Typ. Max. Unit
7.2
ns
8
ns
7.3
10
nC
3.4
nC
2.5
nC
Min.
Typ.
33
11
43
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
0.3
A
1.2
A
1.6
V
450
ns
720
µC
3.2
A
Safe Operating Area
Thermal Impedance
3/8
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