Q1NC60R 데이터 시트보기 (PDF) - STMicroelectronics

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Q1NC60R

N-CHANNEL 600V - 12Ω - 0.3A TO-92 PowerMESH™II Power MOSFET

STMicroelectronics 

STQ1NC60R

N-CHANNEL 600V - 12Ω - 0.3A TO-92

PowerMESH™II Power MOSFET

TYPE

VDSS

RDS(on)

STQ1NC60R

600 V

< 15 Ω

s TYPICAL RDS(on) = 12 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

ID

0.3 A

DESCRIPTION

Using the latest high voltage MESH OVERLAY™II

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprietary edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

TO-92

BULK

TO-92

(AMMOPACK)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s LOW SWITCH MODE POWER SUPPLIES

(SMPS)

s BATTERY CHARGER

ORDERING INFORMATION

SALES TYPE

MARKING

STQ1NC60R

Q1NC60R

STQ1NC60R-AP

Q1NC60R

PACKAGE

TO-92

TO-92

PACKAGING

BULK

AMMOPACK

July 2003

1/9

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