3NF06L 데이터 시트보기 (PDF) - STMicroelectronics

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3NF06L

N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET™ II Power MOSFET

STMicroelectronics 

STN3NF06L

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

ID(1)

Drain current (continuous) at TC = 25 °C

ID

IDM(2)

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4) Single pulse avalanche energy

TJ

Operating junction temperature

Tstg

Storage temperature

1. Current limited by the package

2. Pulse width limited by safe operating area

3. ISD ≤3 A, di/dt ≤150 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX

4. Starting Tj = 25 °C, ID = 4 A, VDD = 30 V

Value

60

± 16

4

2.9

16

3.3

0.026

10

200

-55 to 150

Table 3. Thermal data

Symbol

Parameter

Rthj-pcb

Rthj-pcb

Thermal resistance junction-PCB(1) max

Thermal resistance junction-PCB(2) max

Tl(3)

Maximum lead temperature for soldering

purpose typ

1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t <10 sec.

2. When mounted on minimum recommended footprint

3. for 10 sec. 1.6 mm from case

Value

38

100

260

Unit

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Unit

°C/W

°C/W

°C

3/12

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