STB7NC80ZT4 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STB7NC80ZT4
STMicroelectronics
STB7NC80ZT4 Datasheet PDF : 13 Pages
| |||
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
800
Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp.
ID = 1 mA, VGS = 0
0.9
Coefficient
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
VGS = ± 20V
±10
Current (VDS = 0)
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
3
4
5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.3 A
1.3
1.5
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.3 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Test Conditions
VDD = 400 V, ID = 3 A
RG = 4.7Ω VGS = 10 V
( see test circuit, Figure 3)
VDD = 640 V, ID = 6 A,
VGS = 10V
Min.
Typ.
6
2350
164
17
Typ.
33
12
43
12
15
Max.
Max.
58
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V, ID =6 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
13
13
20
Max.
Unit
V
V/°C
µA
µA
µA
V
Ω
Unit
S
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD =6.1 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6 A, di/dt = 100A/µs
VDD = 40V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV=αT(25°-T) BVGSO(25°)
Min. Typ. Max. Unit
6.5
A
26
A
1.6
V
680
ns
6
µC
18
A
3/13
Share Link: