STU8NB90 데이터 시트보기 (PDF) - STMicroelectronics
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STU8NB90 Datasheet PDF : 5 Pages
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STSTU8NB90
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
8.9
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ.
Max.
Unit
V
1
µA
50
µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =4.8 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
0.7
1
Ω
8.9
A
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =4.8 A
Min.
1.5
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2800
pF
290
pF
25
pF
2/5
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