STU8NB90 데이터 시트보기 (PDF) - STMicroelectronics
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STU8NB90 Datasheet PDF : 5 Pages
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STSTU8NB90
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 450 V ID =4.5 A
RG = 4.7 Ω
VGS = 10 V
Qg
Total Gate Charge
VDD = 720 V ID = 9 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V ID = 9 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 8.9 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 9 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
30
13
Max.
Unit
ns
ns
64
nC
16
nC
26
nC
Min.
Typ.
26
26
35
Max.
Unit
ns
ns
ns
Min.
Typ.
Max.
8.9
35
Unit
A
A
1.6
V
1000
ns
11
µC
23
A
3/5
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