STU36NB20 데이터 시트보기 (PDF) - STMicroelectronics

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STU36NB20

N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET

STMicroelectronics 

STU36NB20

N-CHANNEL ENHANCEMENT MODE

PowerMESH™ MOSFET

TYPE

STU36NB20

V DSS

200 V

RDS(on)

< 0.065 Ω

ID

36 A

PRELIMINARY DATA

s TYPICAL RDS(on) = 0.052 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s ± 30V GATE TO SOURCE VOLTAGE RATING

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

23

1

Max220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

VDGR

VGS

ID

ID

IDM ( •)

Ptot

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Tot al Dissipation at Tc = 25 oC

Derating Factor

200

200

± 30

36

23

144

160

1.28

V

V

V

A

A

A

W

W/oC

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

5.5

-65 to 150

150

(1) ISD ≤36A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ ns

oC

oC

January 1998

1/6

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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