BSR57 데이터 시트보기 (PDF) - Philips Electronics

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BSR57

N-channel FETs

Philips Electronics 

Philips Semiconductors

N-channel FETs

DESCRIPTION

Symmetrical silicon n-channel

depletion type junction field-effect

transistors in a plastic microminiature

envelope intended for application in

thick and thin-film circuits. The

transistors are intended for

low-power, chopper or switching

applications in industrial service.

PINNING

1 = drain

2 = source

3 = gate

Note

1. Drain and source are

interchangeable.

Marking code

BSR56 = M4P

BSR57 = M5P

BSR58 = M6P

QUICK REFERENCE DATA

Drain-source voltage

Total power dissipation up to Tamb = 40 °C

Drain current

VDS = 15 V; VGS = 0

Gate-source cut-off voltage

VDS = 15 V; ID = 0.5 nA

Drain-source resistance (on) at f = 1 kHz

ID = 0; VGS = 0

Feedback capacitance at f = 1 MHz

−VGS = 10 V; VDS = 0

Turn-off time

VDD = 10 V; VGS = 0

ID = 20 mA; −VGSM = 10 V

ID = 10 mA; −VGSM = 6 V

ID = 5 mA; −VGSM = 4 V

April 1991

Product specification

BSR56; BSR57; BSR58

handbook, halfpage

3

1

2

Top view

d

g

s

MAM385

Fig.1 Simplified outline and symbol, SOT23.

±VDS

Ptot

BSR56

max. 40

max. 250

BSR57

40

250

BSR58

40 V

250 mW

>

IDSS

<

50

20

−

100

8 mA

80 mA

>

4

−V(P)GS <

10

2

0.8 V

6

4V

rds on

<

25

40

60 Ω

Crs

<

5

5

5 pF

toff

<

25

−

− ns

toff

<

−

50

− ns

toff

<

−

−

100 ns

2

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