N-channel MOS-FET
500V 0,38Ω 14A 190W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
FAP-450
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=8A; VGS=10V; 80µs pulse test
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
↑
1
↑
2
↑
3
→ VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
→ Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
→ VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=250µA; VDS=VGS
↑
4
↑
5
↑
6
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑
7
→ ID [A]
Max. Avalanche Energy Derating
vs. Starting Channel Temperature
Eas=f(starting Tch): Peak IL = 14A; VCC=50V
→ Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
↑
8
↑
9
→ VDS [V]
Allowable Power Dissipation vs. TC
PD=f(Tc)
→ Starting Tch [°C]
Safe Operation Area
ID=f(VDS): Single Pulse, Tc=25°C
↑
10
↑
12
↑
→ VSD [V]
Transient Thermal impedance
Zth(ch-c=f(t); D=t/T
Zthch=f(t) parameter:D=t/T
→ Tc [°C]
→ VDS [V]
This specification is subject to change without notice!
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